RF/mm-Wave GaN Power Amplifier Design Engineer
EmployerFalcomm
LocationAtlanta, Georgia, United States
Pay$160,000 – $225,000 per year
Posted2026-07-14
Confirmed open2026-10-27
Apply on the employer’s site Open in Atlas
About this role
About the role Falcomm designs energy-efficient power amplifier ICs and turns semiconductor innovation into products customers can build on. Our GaN and CMOS power amplifiers serve satellite communications, aerospace and wireless markets, and we combine deep RF design expertise with an AI-driven design platform to move from specification to finished product faster. As an RF/mm-Wave GaN Power…
Excerpt only. The full posting is on the employer’s careers site.
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